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| MCP73833/4 Stand-Alone Linear Li-Ion / Li-Polymer Charge Management Controller Features * Complete Linear Charge Management Controller - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection * Constant Current / Constant Voltage Operation with Thermal Regulation * High Accuracy Preset Voltage Regulation: - 4.2V, 4.35V, 4.4V, or 4.5V, + 0.75% * Programmable Charge Current: 1A Maximum * Preconditioning of Deeply Depleted Cells - Selectable Current Ratio - Selectable Voltage Threshold * Automatic End-of-Charge Control - Selectable Current Threshold - Selectable Safety Time Period * Automatic Recharge Description The MCP73833/4 is a highly advanced linear charge management controller for use in space-limited, cost sensitive applications. The MCP73833/4 is available in a 10-Lead, 3mm x 3mm DFN package or a 10-Lead, MSOP package. Along with its small physical size, the low number of external components required makes the MCP73833/4 ideally suited for portable applications. For applications charging from a USB port, the MCP73833/4 can adhere to all the specifications governing the USB power bus. The MCP73833/4 employs a constant current/constant voltage charge algorithm with selectable preconditioning and charge termination. The constant voltage regulation is fixed with four available options: 4.20V, 4.35V, 4.40V, or 4.50V, to accomodate new, emerging battery charging requirements. The constant current value is set with one external resistor. The MCP73833/4 limits the charge current based on die temperature during high power or high ambient conditions. This thermal regulation optimizes the charge cycle time while maintaining device reliability. Several options are available for the preconditioning threshold, preconditioning current value, charge termination value, and automatic recharge threshold. The preconditioning value and charge termination value are set as a ratio, or percentage, of the programmed constant current value. Preconditioning can be set to 100%. Refer to Section 1.0 "Electrical Characteristics" for available options and the "Product Indentification System" for standard options. The MCP73833/4 is fully specified over the ambient temperature range of -40C to +85C. - Selectable Voltage Threshold Two Charge Status Outputs Cell Temperature Monitor Low-Dropout Linear Regulator Mode Automatic Power-Down when Input Power Removed * Under Voltage Lockout * Numerous Selectable Options Available for a Variety of Applications: - Refer to Section 1.0 "Electrical Characteristics" for Selectable Options - Refer to the "Product Identification System" for Standard Options * Available Packages: - 3mm x 3mm DFN-10 - MSOP-10 * * * * Package Types DFN-10 VDD 1 VDD 2 STAT1 3 STAT2 4 VSS 5 10 VBAT 9 VBAT 8 THERM 7 PG(TE) 6 PROG 10 9 8 7 6 VBAT VBAT THERM PG(TE) PROG Applications * * * * * * * Lithium-Ion / Lithium-Polymer Battery Chargers Personal Data Assistants Cellular Telephones Digital Cameras MP3 Players Bluetooth Headsets USB Chargers MSOP-10 VDD VDD STAT1 STAT2 VSS 1 2 3 4 5 (c) 2006 Microchip Technology Inc. DS22005A-page 1 MCP73833/4 Typical Application 1A Li-Ion Battery Charger VIN 1 F 3 470 4 470 470 STAT1 THERM STAT2 PROG VSS MCP73833 8 6 5 1 k T 10 k 1,2 V DD VBAT 9,10 1 F + Single - Li-Ion Cell 7 PG Functional Block Diagram VDD 10 A Direction Control VBAT 6 A G=0.001 PROG G=0.001 1 k CURRENT + LIMIT - Reference Generator VREF (1.21V) 310 k 72.7 k 6 A + + + - 111 k 10 k + - CA PRECONDITION 470.6 k 48 k TERMINATIO N 6 k CHARG E + VA 157.3 k 50 A + + + + + 1 M 121 k SHDN Charge Control, Timer, and Status Logic 175 k 54 k STAT1 LDO STAT2 VSS THERM 121 k UVLO PG (TE) HTVT 470.6k LTVT DS22005A-page 2 (c) 2006 Microchip Technology Inc. MCP73833/4 1.0 ELECTRICAL CHARACTERISTICS *Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD........................................................................ 7.0V All Inputs and Outputs w.r.t. VSS .....-0.3 to (VDD+0.3)V Maximum Junction Temperature, TJ . Internally Limited Storage temperature .......................... -65C to +150C ESD protection on all pins: Human Body Model (HBM) (1.5 k in Series with 100 pF)............................... 4 kV Machine Model (MM) (200 pF, No Series Resistance) ........................... 300V DC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 6V, TA=-40C to 85C. Typical values are at +25C, VDD= [VREG(Typ)+1.0V] Parameters Supply Input Supply Voltage VDD 3.75 VREG(Typ) +0.3V Supply Current ISS -- -- -- -- UVLO Start Threshold UVLO Stop Threshold UVLO Hysteresis Regulated Output Voltage VSTART VSTOP VHYS VREG 3.4 3.3 -- 4.168 4.318 4.367 4.467 Line Regulation Load Regulation Supply Ripple Attenuation |(VBAT/VBAT) /VDD| |VBAT/ VBAT| PSRR -- -- -- -- -- Current Regulation (Fast Charge Constant Current Mode) Fast Charge Current Regulation IREG 90 900 Maximum Output Current Limit IMAX -- 100 1000 1200 110 1100 -- mA mA mA PROG = 10 k PROG = 1.0 k TA=-5C to +55C PROG < 833 -- -- 2000 150 100 50 3.55 3.45 100 4.20 4.35 4.40 4.50 0.10 0.10 58 47 25 6 6 3000 300 300 100 3.7 3.6 -- 4.232 4.382 4.433 4.533 0.30 0.30 -- -- -- V V A A A A V V mV V V V V %/V % dB dB dB VDD=[VREG(Typ)+1V] to 6V IOUT=10 mA IOUT=10 mA to 100 mA VDD=[VREG(Typ)+1V] IOUT=10 mA, 10Hz to 1 kHz IOUT=10 mA, 10Hz to 10 kHz IOUT=10 mA, 10Hz to 1 MHz VDD=[VREG(Typ)+1V] IOUT=10 mA TA=-5C to +55C Charging Charge Complete, Standby Charging Charge Complete Standby (No Battery or PROG Floating) Shutdown (VDD < VBAT, or VDD < VSTOP) VDD Low to High VDD High to Low Sym Min Typ Max Units Conditions Voltage Regulation (Constant Voltage Mode, System Test Mode) (c) 2006 Microchip Technology Inc. DS22005A-page 3 MCP73833/4 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 6V, TA=-40C to 85C. Typical values are at +25C, VDD= [VREG(Typ)+1.0V] Parameters Precondition Current Ratio Sym IPREG / IREG Min 7.5 15 30 -- Precondition Voltage Threshold Ratio Precondition Hysteresis Charge Termination Charge Termination Current Ratio ITERM / IREG 3.75 5.6 7.5 15 Automatic Recharge Recharge Voltage Threshold Ratio Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output Reverse Leakage Current IDISCHARGE -- -- -- -- Status Indicators - STAT1, STAT2, PG Sink Current Low Output Voltage Input Leakage Current PROG Input Charge Impedance Range Standy Impedance Thermistor Bias Thermistor Current Source Thermistor Comparator Upper Trip Threshold Upper Trip Point Hysteresis Lower Trip Threshold Lower Trip Point Hysteresis System Test (LDO) Mode Input High Voltage Level THERM Input Sink Current Bypass Capacitance VIH ISINK CBAT (VDD-0.1) Typ 10 20 40 100 66.5 71.5 100 5 7.5 10 20 94.0 96.5 300 Max 12.5 25 50 -- 70 75 -- 6.25 9.4 12.5 25 -- -- -- Units % % % % % % mV % % % % % % m Conditions PROG = 1.0 k to 10 k TA=-5C to +55C Preconditioning Current Regulation (Trickle Charge Constant Current Mode) VPTH / VREG VPHYS 64 69 -- VBAT Low to High VBAT High to Low PROG = 1.0 k to 10 k TA=-5C to +55C VRTH / VREG -- -- VBAT High to Low RDSON -- VDD = 3.75V TJ = 105C PROG Floating VDD < VBAT VDD < VSTOP Charge Complete 0.15 0.25 0.15 -5.5 15 0.4 0.01 -- -- 2 2 2 -15 25 1 1 20 200 A A A A mA V A k k ISINK VOL ILK RPROG RPROG -- -- -- 1 70 ISINK = 4 mA High Impedance, 6V on pin Minimum Impedance for Standby 2 k < RTHERM < 50 k VTHERM Low to High VTHERM High to Low ITHERM VT1 VT1HYS VT2 VT2HYS 47 1.20 -- 0.235 -- 50 1.23 -50 0.25 50 -- 6 -- -- 53 1.26 -- 0.265 -- -- 20 -- -- A V mV V mV V A F F 3 1 4.7 Stand-by or system test mode IOUT < 250 mA IOUT > 250 mA DS22005A-page 4 (c) 2006 Microchip Technology Inc. MCP73833/4 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 6V, TA=-40C to 85C. Typical values are at +25C, VDD= [VREG(Typ)+1.0V] Parameters Automatic Power Down Automatic Power Down Entry Threshold Automatic Power Down Exit Threshold Timer Enable Input (TE) Input High Voltage Level Input Low Voltage Level Input Leakage Current Thermal Shutdown Die Temperature Die Temperature Hysteresis TSD TSDHYS -- -- 150 10 -- -- C C VIH VIL ILK 2.0 -- -- -- -- 0.01 -- 0.6 1 V V A VTE = 6V VPD VPDEXIT -- -- VBAT + 50 mV VBAT + 150 mV -- -- V V 2.3V < VBAT < VREG VDD Falling 2.3V < VBAT < VREG VDD Rising Sym Min Typ Max Units Conditions AC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 6V, TA=-40C to 85C. Typical values are at +25C, VDD= [VREG(Typ)+1.0V] Parameters UVLO Start Delay Current Regulation Transition Time Out of Preconditioning Current Rise Time Out of Preconditioning Preconditioning Comparator Filter Time Termination Comparator Filter Time Charge Comparator Filter Time Thermistor Comparator Filter Time Elapsed Timer Elapsed Timer Period tELAPSED 0 3.6 5.4 7.2 Status Indicators Status Output turn-off Status Output turn-on tOFF tON -- -- -- -- 200 200 s s ISINK = 1 mA to 0 mA ISINK = 0 mA to 1 mA 0 4.0 6.0 8.0 0 4.4 6.6 8.8 Hours Hours Hours Hours Timer Disabled tDELAY tRISE tPRECON tTERM tCHARGE tTHERM -- -- 0.4 0.4 0.4 0.4 -- -- 1.3 1.3 1.3 1.3 1 1 3.2 3.2 3.2 3.2 ms ms ms ms ms ms VBAT TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 6V. Typical values are at +25C, VDD= [VREG(Typ)+1.0V] Parameters Temperature Ranges Specified Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances Thermal Resistance, MSOP-10 Thermal Resistance, 3mm x 3mm DFN-10 JA JA -- -- 113 41 -- -- C/W C/W 4-Layer JC51-7 Standard Board, Natural Convection 4-Layer JC51-7 Standard Board, Natural Convection TA TA TA -40 -40 -65 -- -- -- +85 +125 +150 C C C Symbol Min Typ Max Units Conditions (c) 2006 Microchip Technology Inc. DS22005A-page 5 MCP73833/4 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VDD = 5.2V, VREG = 4.20V, IOUT = 10 mA and TA= +25C, Constant-voltage mode. 4.210 4.205 4.200 4.195 4.190 4.185 4.180 4.175 4.170 4.50 4.75 5.00 5.25 IOUT = 500 mA IOUT = 900 mA Battery Regulation Voltage (V) MCP73833 IOUT = 10 mA IOUT = 100 mA 1000 Charge Current (mA) 100 10 5.50 5.75 6.00 1 3 5 7 9 11 13 15 17 19 21 Supply Voltage (V) Programming Resistor (k ) FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). Battery Regulation Voltage (V) FIGURE 2-4: Charge Current (IOUT) vs. Programming Resistor (RPROG). 104 4.220 4.210 4.200 4.190 4.180 4.170 4.160 -40 MCP73833 IOUT = 10 mA IOUT = 100 mA Charge Current (mA) 103 102 101 100 99 98 97 96 4.50 4.75 5.00 5.25 5.50 RPROG = 10 k IOUT = 500 mA IOUT = 900 mA 0 10 20 30 40 50 60 70 -30 -20 -10 80 5.75 6.00 Ambient Temperature (C) Supply Voltage (V) FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Ambient Temperature (TA). FIGURE 2-5: Charge Current (IOUT) vs. Supply Voltage (VDD). 1004 Output Leakage Current ( A) 0.40 +85C -40C +25C Charge Current (mA) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1002 1000 998 996 994 992 990 988 986 4.50 RPROG = 1 k 0.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.75 5.00 5.25 5.50 5.75 6.00 Battery Regulation Voltage (V) Supply Voltage (V) FIGURE 2-3: Output Leakage Current (IDISCHARGE) vs. Battery Regulation Voltage (VBAT). FIGURE 2-6: Charge Current (IOUT) vs. Supply Voltage (VDD). DS22005A-page 6 (c) 2006 Microchip Technology Inc. MCP73833/4 TYPICAL PERFORMANCE CURVES (Continued) Note: Unless otherwise indicated, VDD = 5.2V, VREG = 4.20V, IOUT = 10 mA and TA= +25C, Constant-voltage mode. 120 Charge Current (mA) RPROG = 10 k Thermistor Bias Current (A) 52.0 51.5 51.0 50.5 50.0 49.5 49.0 48.5 48.0 100 80 60 40 20 0 25 35 45 55 65 75 85 95 105 115 125 135 145 155 -40 -30 -20 -10 0 10 20 30 40 50 60 70 Junction Temperature (C) Ambient Temperature (C) FIGURE 2-7: Charge Current (IOUT) vs. Junction Temperature (TJ). 1200 RPROG = 1 k FIGURE 2-10: Thermistor Bias Current (ITHRERM) vs. Ambient Temperature (TA). 0 -10 Charge Current (mA) 1000 Attenuation (dB) 800 600 400 200 0 25 35 45 55 65 75 85 95 105 115 125 135 145 155 -20 -30 -40 -50 -60 VAC = 100 mVp-p IOUT = 10 mA COUT = 4.7 F, X7R Ceramic -70 0.01 0.1 1 10 100 1000 Junction Temperature (C) Frequency (kHz) FIGURE 2-8: Charge Current (IOUT) vs. Junction Temperature (TJ). 52.0 51.5 51.0 50.5 50.0 49.5 49.0 48.5 48.0 4.50 4.75 5.00 5.25 5.50 5.75 6.00 FIGURE 2-11: Power Supply Ripple Rejection (PSRR). 0 -10 Thermistor Bias Current ( A) Attenuation (dB) -20 -30 -40 -50 VAC = 100 mVp-p IOUT = 100 mA COUT = 4.7 F, X7R Ceramic -60 0.01 0.1 1 10 100 1000 Supply Voltage (V) Frequency (kHz) FIGURE 2-9: Thermistor Bias Current (ITHRERM) vs. Supply Voltage (VDD). FIGURE 2-12: Power Supply Ripple Rejection (PSRR). (c) 2006 Microchip Technology Inc. DS22005A-page 7 80 MCP73833/4 TYPICAL PERFORMANCE CURVES (Continued) Note: Unless otherwise indicated, VDD = 5.2V, VREG = 4.20V, IOUT = 10 mA and TA= +25C, Constant-voltage mode. 14 12 Source Voltage (V) 0.10 0.05 Output Current (A) 1.40 1.20 Output Ripple (V) 0.10 0.05 0.00 -0.05 -0.10 -0.15 COUT = 4.7 F, X7R Ceramic 10 8 6 4 2 0 -2 0 20 40 60 80 100 IOUT = 10 mA COUT = 4.7 F, X7R Ceramic 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 200 1.00 0.80 0.60 0.40 0.20 0.00 -0.20 0 20 40 60 80 100 120 140 160 180 200 -0.20 -0.25 -0.30 120 140 160 Time (s) 180 Time (s) FIGURE 2-13: 14 12 Source Voltage (V) Line Transient Response. 0.10 0.05 0.00 -0.05 -0.10 -0.15 IOUT = 100 mA COUT = 4.7 F, X7R Ceramic FIGURE 2-16: 5.0 Battery Voltage (V) Load Transient Response. 200 160 120 80 Charge Current (A) Charge Current (A) 10 8 6 4 2 0 -2 0 20 40 60 80 100 Output Ripple (V) 4.0 3.0 2.0 1.0 0.0 0 30 60 90 120 150 180 210 MCP73833-FCI/MF VDD = 5.2V RPROG = 10.0 k -0.20 -0.25 -0.30 200 40 0 120 140 160 Time (s) 180 Time (Minutes) FIGURE 2-14: Line Transient Response. FIGURE 2-17: Complete Charge Cycle (180 mA Li-Ion Battery). 5.0 Battery Voltage (V) 200 160 120 80 MCP73833-FCI/MF VDD = 5.2V RPROG = 10.0 k 0.35 0.30 Output Current (A) 0.04 0.02 0.00 -0.02 -0.04 -0.06 COUT = 4.7 F, X7R Ceramic 0.25 0.20 0.15 0.10 0.05 0.00 -0.05 0 20 40 60 80 100 120 140 160 180 200 Output Ripple (V) 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 Time (Minutes) -0.08 -0.10 -0.12 40 0 Time (s) FIGURE 2-15: Load Transient Response. FIGURE 2-18: Charge Cycle Start Preconditioning (180 mAh Li-Ion Battery). DS22005A-page 8 (c) 2006 Microchip Technology Inc. Output Ripple (V) MCP73833/4 3.0 PIN DESCRIPTIONS PIN FUNCTION TABLE Symbol VDD VDD STAT1 STAT2 VSS PROG PG, TE THERM VBAT VBAT Battery Management Input Supply Battery Management Input Supply Charge Status Output Charge Status Output Battery Management 0V Reference Current Regulation Set and Charge Control Enable MCP73833: Power Good output, MCP73834: Timer Enable input Thermistor input Battery Charge Control Output Battery Charge Control Output Function Descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. DFN 1 2 3 4 5 6 7 8 9 10 MSOP 1 2 3 4 5 6 7 8 9 10 3.1 Battery Management Input Supply (VDD) 3.6 Timer Enable Input (TE) MCP73834 Only A supply voltage of [VREG (typ.) + 0.3V] to 6V is recommended. Bypass to VSS with a minimum of 1 F. 3.2 Charge Status Outputs (STAT1, STAT2) STAT1 and STAT2 are open-drain logic outputs for connection to a LED for charge status indication. Alternatively, a pull-up resistor can be applied for interfacing to a host microcontroller. The timer enable (TE) input option is used to enable or disable the internal timer. A low signal on this pin enables the internal timer and a high signal disables the internal timer. The TE input can be used to disable the timer when the charger is supplying current to charge the battery and power the system load. The TE input is compatible with 1.8V logic. 3.7 Thermistor Input (THERM) 3.3 Battery Management 0V Reference (VSS) Connect to negative terminal of battery and input supply. An internal 50 A current source provides the bias for most common 10 k negative-temperature coefficient thermistors (NTC). The MCP73833/4 compares the voltage at the THERM pin to factory set thersholds of 1.20V and 0.25V, typically. 3.8 3.4 Current Regulation Set (PROG) Battery Charge Control Output (VBAT) Preconditioning, fast charge, and termination currents are scaled by placing a resistor from PROG to VSS. The charge management controller can be disabled by allowing the PROG input to float. Connect to positive terminal of battery. Drain terminal of internal P-channel MOSFET pass transistor. Bypass to VSS with a minimum of 1 F to ensure loop stability when the battery is disconnected. 3.5 Power Good Indication (PG) MCP73833 Only The power good (PG) option is a pseudo open-drain output. The PG output can sink current, but not source current. However, there is a diode path back to the input, and, as such, the PG output should only be pulled up to the input. The PG output is low whenever the input to the MCP73833 is above the UVLO threshold and greater than the battery voltage. (c) 2006 Microchip Technology Inc. DS22005A-page 9 MCP73833/4 4.0 FUNCTIONAL DESCRIPTION The MCP73833/4 is a highly advanced linear charge management controller. Refer to the functional block diagram and Figure 4-1 that depicts the operational flow algorithm from charge initiation to completion and automatic recharge. SHUTDOWN MODE * VDD < VUVLO VDD < VBAT STAT1 = HI-Z STAT2 = HI-Z PG = HI-Z * Continuously Monitored SYSTEM TEST (LDO) MODE VTHERM > (VDD - 100 mv) PROG > 20 k STAT1 = LOW STAT2 = LOW PG = LOW Timer Suspended STANDBY MODE * VBAT (VREG + 100 mv) PROG > 200 k STAT1 = HI-Z STAT2 = HI-Z PG = LOW VBAT < VPTH PRECONDITIONING MODE Charge Current (IPREG STAT1 = LOW STAT2 = Hi-Z PG = LOW Timer Reset VBAT > VPTH VBAT > VPTH TEMPERATURE FAULT No Charge Current STAT1 = Hi-Z STAT2 = Hi-Z PG = LOW Timer Suspended FAST CHARGE MODE Charge Current (IREG STAT1 = LOW STAT2 = Hi-Z PG = LOW Timer Enabled VBAT = VREG Timer Expired VBAT < VRTH TIMER FAULT No Charge Current STAT1 = Hi-Z STAT2 = Hi-Z PG = LOW Timer Suspended CONSTANT VOLTAGE MODE Charge Voltage (VREG STAT1 = LOW STAT2 = Hi-Z PG = LOW VBAT < ITERM Timer Expired CHARGE COMPLETE MODE No Charge Current STAT1 = HI-Z STAT2 = LOW PG = LOW Timer Reset FIGURE 4-1: Flow Chart. DS22005A-page 10 (c) 2006 Microchip Technology Inc. MCP73833/4 4.1 Under Voltage Lockout (UVLO) 4.4 An internal under voltage lockout (UVLO) circuit monitors the input voltage and keeps the charger in shutdown mode until the input supply rises above the UVLO threshold. The UVLO circuitry has a built in hysteresis of 100 mV. In the event a battery is present when the input power is applied, the input supply must rise +150 mV above the battery voltage before the MCP73833/4 becomes operational. The UVLO circuit places the device in shutdown mode if the input supply falls to within +50 mV of the battery voltage. The UVLO circuit is always active. At any time the input supply is below the UVLO threshold or within +50 mV of the voltage at the VBAT pin, the MCP73833/4 is placed in a shutdown mode. During any UVLO condition, the battery reverse discharge current shall be less than 2 A. Constant Current - Fast Charge Mode During the constant current mode, the programmed charge current is supplied to the battery or load. The charge current is established using a single resistor from PROG to VSS. The program resistor and the charge current are calculated using Equation 4-1: EQUATION 4-1: Where: RPROG IREG = = 1000V I REG = ---------------R PROG kilo-ohms milliampere Constant current mode is maintained until the voltage at the VBAT pin reaches the regulation voltage, VREG. When constant current mode is invoked, the internal timer is reset. 4.4.1 TIMER EXPIRED DURING CONSTANT CURRENT - FAST CHARGE MODE 4.2 Charge Qualification For a charge cycle to begin, all UVLO conditions must be met and a battery or output load must be present. A charge current programming resistor must be connected from PROG to VSS. If the PROG pin is open or floating, the MCP73833/4 is disabled and the battery reverse discharge current is less than 2 A. In this manner, the PROG pin acts as a charge enable and can be used as a manual shutdown. If the input supply voltage is above the UVLO the threshold, but below VREG(Typ)+0.3V, MCP73833/4 will pulse the STAT1 and PG outputs as the device determines if a battery is present. If the internal timer expires before the recharge voltage threshold is reached, a timer fault is indicated and the charge cycle terminates. The MCP73833/4 remains in this condition until the battery is removed, the input power is removed, or the PROG pin is opened. If the battery is removed or the PROG pin is opened, the MCP73833/4 enters the Standby mode where it remains until a battery is reinserted or the PROG pin is reconnected. If the input power is removed, the MCP73833/4 is in Shutdown. When the input power is reapplied, a normal start-up sequence ensues. 4.5 Constant Voltage Mode 4.3 Preconditioning If the voltage at the VBAT pin is less than the preconditioning threshold, the MCP73833/4 enters a preconditioning or trickle charge mode. The preconditioning threshold is factory set. Refer to Section 1.0 "Electrical Characteristics" for preconditioning threshold options. In this mode, the MCP73833/4 supplies a percentage of the charge current (established with the value of the resistor connected to the PROG pin) to the battery. The percentage or ratio of the current is factory set. Refer to Section 1.0 "Electrical Characteristics" for preconditioning current options. When the voltage at the VBAT pin rises above the preconditioning threshold, the MCP73833/4 enters the constant current or fast charge mode. When the voltage at the VBAT pin reaches the regulation voltage, VREG, constant voltage regulation begins. The regulation voltage is factory set to 4.20V, 4.35V, 4.40V, or 4.50V with a tolerance of 0.75%. 4.6 Charge Termination The charge cycle is terminated when, during constant voltage mode, the average charge current diminishes below a percentage of the programmed charge current (established with the value of the resistor connected to the PROG pin) or the internal timer has expired. A 1 ms filter time on the termination comparator ensures that transient load conditions do not result in premature charge cycle termination. The percentage or ratio of the current is factory set. The timer period is factory set and can be disabled. Refer to Section 1.0 "Electrical Characteristics" for charge termination current ratio and timer period options. The charge current is latched off and the MCP73833/4 enters a charge complete mode. (c) 2006 Microchip Technology Inc. DS22005A-page 11 MCP73833/4 4.7 Automatic Recharge 4.9 Thermal Shutdown The MCP73833/4 continuously monitors the voltage at the VBAT pin in the charge complete mode. If the voltage drops below the recharge threshold, another charge cycle begins and current is once again supplied to the battery or load. The recharge threshold is factory set. Refer to Section 1.0 "Electrical Characteristics" for recharge threshold options. The MCP73833/4 suspends charge if the die temperature exceeds +150C. Charging will resume when the die temperature has cooled by approximately +10C. The thermal shutdown is a secondary safety feature in the event that there is a failure within the thermal regulation circuitry. 4.8 Thermal Regulation The MCP73833/4 limits the charge current based on the die temperature. The thermal regulation optimizes the charge cycle time while maintaining device reliability. Figure 4-2 depicts the thermal regulation for the MCP73833/4. 1200 Charge Current (mA) RPROG = 1 k 1000 800 600 400 200 0 25 35 45 55 65 75 85 95 105 115 125 135 145 155 Junction Temperature (C) FIGURE 4-2: Thermal Regulation. DS22005A-page 12 (c) 2006 Microchip Technology Inc. MCP73833/4 5.0 5.1 5.1.1 DETAILED DESCRIPTION Analog Circuitry BATTERY MANAGEMENT INPUT SUPPLY (VDD) pass transistor and holding the timer value. The charge cycle resumes when the voltage at the THERM pin returns to the normal range. If temperature monitoring is not required, place a standard 10 k resistor from THERM to VSS The VDD input is the input supply to the MCP73833/4. The MCP73833/4 automatically enters a Power-down mode if the voltage on the VDD input falls below the UVLO voltage (VSTOP). This feature prevents draining the battery pack when the VDD supply is not present. 5.1.4.1 System Test (LDO) Mode 5.1.2 CURRENT REGULATION SET (PROG) Fast charge current regulation can be scaled by placing a programming resistor (RPROG) from the PROG input to VSS. The program resistor and the charge current are calculated using the Equation 5-1: The MCP73833/4 can be placed in a system test mode. In this mode, the MCP73833/4 operates as a low dropout linear regulator (LDO). The output voltage is regulated to the factory set voltage regulation option. The available output current is limitted to the programmed fast charge current. For stability, the VBAT output must be bypassed to VSS with a minimum capacitance of 1 F for output currents up to 250 mA. A minimum capacitance of 4.7 F is required for output currents above 250 mA. The system test mode is entered by driving the THERM input greater than (VDD-100 mV) with no battery connected to the output. In this mode, the MCP73833/4 can be used to power the system without a battery present. Note 1: ITHERM is disabled during shutdown, stand-by, and system test modes. 2: A pull-down current source on the THERM input is active only in stand-by and system test modes. 3: During system test mode, the PROG input sets the available output current limit. 4: System test mode shall be exited by releasing the THERM input or cycling input power. EQUATION 5-1: Where: RPROG IREG = = 1000V I REG = ---------------R PROG kilo-ohms milliampere The preconditioning trickle-charge current and the charge termination current are ratiometric to the fast charge current based on the selected device options. 5.1.3 BATTERY CHARGE CONTROL OUTPUT (VBAT) The battery charge control output is the drain terminal of an internal P-channel MOSFET. The MCP73833/4 provides constant current and voltage regulation to the battery pack by controlling this MOSFET in the linear region. The battery charge control output should be connected to the positive terminal of the battery pack. 5.2 5.2.1 Digital Circuitry STATUS INDICATORS AND POWER GOOD (PG - OPTION) 5.1.4 TEMPERATURE QUALIFICATION (THERM) The MCP73833/4 continuously monitors battery temperature during a charge cycle by measuring the voltage between the THERM and VSS pins. An internal 50 A current source provides the bias for most common 10 k negative-temperature coefficient (NTC) or positive-temperature coefficient (PTC) thermistors.The current source is controlled, avoiding measurement sensitivity to fluctuations in the supply voltage (VDD). The MCP73833/4 compares the voltage at the THERM pin to factory set thersholds of 1.20V and 0.25V, typically. Once a volage outside the thresholds is detected during a charge cycle, the MCP73833/4 immediately suspends the charge cycle. The MCP73833/4 suspends charge by turning off the The charge status outputs have two different states: Low (L), and High Impedance (Hi-Z). The charge status outputs can be used to illuminate LEDs. Optionally, the charge status outputs can be used as an interface to a host microcontroller. Table 5-1 summarize the state of the status outputs during a charge cycle. TABLE 5-1: Shutdown Standby Charge in Progress STATUS OUTPUTS STAT1 Hi-Z Hi-Z L Hi-Z Hi-Z Hi-Z L STAT2 Hi-Z Hi-Z Hi-Z L Hi-Z Hi-Z L PG Hi-Z L L L L L L CHARGE CYCLE STATE Charge Complete (EOC) Temperature Fault Timer Fault System Test Mode (c) 2006 Microchip Technology Inc. DS22005A-page 13 MCP73833/4 5.2.2 POWER GOOD (PG) OPTION 5.2.4 DEVICE DISABLE (PROG) The power good (PG) option is a pseudo open-drain output. The PG output can sink current, but not source current. However, there is a diode path back to the input, and as such, the PG output should only be pulled up to the input. The PG output is low whenever the input to the MCP73833 is above the UVLO threshold and greater than the battery voltage. If the supply voltage is above the UVLO, but below VREG(Typ)+0.3V, the MCP73833 will pulse the PG output as the device determines if a battery is present. The current regulation set input pin (PROG) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. Placing a programming resistor from the PROG input to VSS enables the device. Allowing the PROG input to float or by applying a logic-high input signal, disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 100 A, typically. 5.2.3 TIMER ENABLE (TE) OPTION The timer enable (TE) input option is used to enable or disable the internal timer. A low signal on this pin enables the internal timer and a high signal disables the internal timer. The TE input can be used to disable the timer when the charger is supplying current to charge the battery and power the system load. The TE input is compatible with 1.8V logic. DS22005A-page 14 (c) 2006 Microchip Technology Inc. MCP73833/4 6.0 APPLICATIONS Constant-current followed by Constant-voltage. Figure 6-1 depicts a typical stand-alone application circuit, while Figures 6-2 and 6-3 depict the accompanying charge profile. The MCP73833/4 is designed to operate in conjunction with a host microcontroller or in stand-alone applications. The MCP73833/4 provides the preferred charge algorithm for Lithium-Ion and Lithium-Polymer cells Li-Ion Battery Charger 1,2 CIN LED Regulated Wall Cube LED LED 3 RLED 4 RLED 7 RLED STAT1 THERM STAT2 PG PROG VSS MCP73833 8 RT1 6 5 RPROG RT2 T 10 k VDD VBAT 9,10 + Single Li-Ion - Cell COUT FIGURE 6-1: Typical Application Circuit. 6.1 5.0 Battery Voltage (V) 4.0 3.0 2.0 1.0 0.0 0 20 40 60 80 100 120 140 160 MCP73833-FCI/MF VDD = 5.2V RPROG = 1.00 k Application Circuit Design 2.00 1.60 1.20 0.80 0.40 0.00 Charge Current (A) Time (Minutes) Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the battery charger and the ambient cooling air. The worst-case situation is when the device has transitioned from the Preconditioning mode to the Constant-current mode. In this situation, the battery charger has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. FIGURE 6-2: Typical Charge Profile with Thermal Regulation (1700 mAh Li-Ion Battery). 6.1.1 COMPONENT SELECTION 5.0 Battery Voltage (V) 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 Time (Minutes) 10 MCP73833-FCI/MF VDD = 5.2V RPROG = 1.00 k 2.00 Charge Current (A) 1.60 1.20 0.80 0.40 0.00 Selection of the external components in Figure 6-1 is crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for the component selection process. 6.1.1.1 Current Programming Resistor (RPROG) The preferred fast charge current for Lithium-Ion cells is at the 1C rate, with an absolute maximum current at the 2C rate. For example, a 500 mAh battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. FIGURE 6-3: Typical Charge Cycle Start with Thermal Regulation (1700 mAh Li-Ion Battery). (c) 2006 Microchip Technology Inc. DS22005A-page 15 MCP73833/4 6.1.1.2 Thermal Considerations 6.1.1.5 Charge Inhibit The worst-case power dissipation in the battery charger occurs when the input voltage is at the maximum and the device has transitioned from the Preconditioning mode to the Constant-current mode. In this case, the power dissipation is: PowerDissipation = ( V DDMAX - V PTHMIN ) x I REGMAX The current regulation set input pin (PROG) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. Placing a programming resistor from the PROG input to VSS enables the device. Allowing the PROG input to float or by applying a logic-high input signal, disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 100 A, typically. Where: VDDMAX IREGMAX VPTHMIN = = = the maximum input voltage the maximum fast charge current the minimum transition threshold voltage 6.1.1.6 Temperature Monitoring Power dissipation with a 5V, 10% input voltage source is: PowerDissipation = ( 5.5V - 2.7V ) x 550mA = 1.54W The charge temperature window can be set by placing fixed value resistors in series-parallel with a thermistor. The resistance values of RT1 and RT2 can be calculated with the following equations in order to set the temperature window of interest. For NTC thermistors: R T2 x R COLD 24k = R T1 + -------------------------------R T2 + R COLD R T2 x R HOT 5k = R T1 + ---------------------------R T2 + R HOT Where: RT1 is the fixed series resistance RT2 is the fixed parallel resistance RCOLD is the thermistor resistance at the lower temperature of interest RHOT is the thermistor resistance at the upper temperature of interest. For example, by utilizing a 10 k at 25C NTC thermistor with a sensitivity index, , of 3892, the charge temperature range can be set to 0C - 50C by placing a 1.54 k resistor in series (RT1), and a 69.8 k resistor in parallel (RT2) with the thermistor as depicted in Figure 6-1. This power dissipation with the battery charger in the MSOP-10 package will cause thermal regulation to be entered as depicted in Figure 6-3. Alternatively, the 3 mm x 3 mm DFN package could be utilized to reduce charge cycle times. 6.1.1.3 External Capacitors The MCP73833/4 is stable with or without a battery load. In order to maintain good AC stability in the Constant-voltage mode, a minimum capacitance of 4.7 F is recommended to bypass the VBAT pin to VSS. This capacitance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during Constant-voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor's minimum Effective Series Resistance (ESR) value. The actual value of the capacitor (and its associated ESR) depends on the output load current. A 4.7 F ceramic, tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for output currents up to a 500 mA. 6.1.1.7 Charge Status Interface A status output provides information on the state of charge. The output can be used to illuminate external LEDs or interface to a host microcontroller. Refer to Table 5-1 for a summary of the state of the status output during a charge cycle. 6.1.1.4 Reverse-Blocking Protection The MCP73833/4 provides protection from a faulted or shorted input. Without the protection, a faulted or shorted input would discharge the battery pack through the body diode of the internal pass transistor. DS22005A-page 16 (c) 2006 Microchip Technology Inc. MCP73833/4 6.2 PCB Layout Issues For optimum voltage regulation, place the battery pack as close as possible to the device's VBAT and VSS pins, recommended to minimize voltage drops along the high current-carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias in the heatsink pad can help conduct more heat to the backplane of the PCB, thus reducing the maximum junction temperature. Figures 6-4 and 6-5 depict a typical layout with PCB heatsinking. MCP73833 VSS CIN VDD STAT1 STAT2 RPROG COUT VBAT THERM PG FIGURE 6-4: Typical Layout (Top). VSS VDD VBAT FIGURE 6-5: Typical Layout (Bottom). (c) 2006 Microchip Technology Inc. DS22005A-page 17 MCP73833/4 7.0 7.1 PACKAGING INFORMATION Package Marking Information 10-Lead DFN 1 2 3 4 5 10 Part Number * Marking Code Part Number * Marking Code Example: 1 2 3 4 5 10 XXXX XYWW NNN 9 8 7 6 MCP73833-AMI/MF AAAA MCP73833-BZI/MF AAAB MCP73833-FCI/MF AAAC MCP73834-FCI/MF MCP73833-GPI/MF AAAD MCP73834-GPI/MF MCP73833-NVI/MF AAAF MCP73834-NVI/MF MCP73833-CNI/MF AAAK MCP73834-CNI/MF * Consult Factory for Alternative Device Options. BAAC BAAD BAAF BAAK AAAA 0633 256 9 8 7 6 10-Lead MSOP Part Number * Marking Code Part Number * Marking Code Example: XXXXXX YWWNNN MCP73833-AMI/UN 833AMI MCP73833-BZI/UN 833BZI MCP73833-FCI/UN 833FCI MCP73834-FCI/UN MCP73833-GPI/UN 833GPI MCP73834-GPI/UN MCP73833-NVI/UN 833NVI MCP73834-NVI/UN MCP73833-CNI/UN 833CNI MCP73834-CNI/UN * Consult Factory for Alternative Device Options. 834FCI 834GPI 834NVI 834CNI 8336SI 633256 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. DS22005A-page 18 (c) 2006 Microchip Technology Inc. MCP73833/4 10-Lead Plastic Dual-Flat No-Lead Package (MF) 3x3x0.9 mm Body (DFN) - Saw Singulated Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b p n L E K D D2 PIN 1 ID INDEX AREA (NOTE 1) EXPOSED METAL PAD (NOTE 2) 2 E2 1 TOP VIEW A EXPOSED TIE BAR (NOTE 3) BOTTOM VIEW A3 A1 Units Dimension Limits Number of Pins Pitch Overall Height Standoff Lead Thickness Overall Length Exposed Pad Length Overall Width Exposed Pad Width Lead Width Contact Length Contact-to-Exposed Pad (Note 3) (Note 3) n e A A1 A3 E E2 D D2 b L K .112 .082 .112 .051 .008 .012 .008 .031 .000 MIN INCHES NOM 10 .020 BSC .035 .001 .008 REF. .118 .094 .118 .065 .010 .016 -- .124 .096 .124 .067 .015 .020 -- 2.85 2.08 2.85 1.30 0.18 0.30 0.20 .039 .002 0.80 0.00 MAX MIN MILLIMETERS* NOM 10 0.50 BSC 0.90 0.02 0.20 REF. 3.00 2.39 3.00 1.65 0.25 0.40 -- 3.15 2.45 3.15 1.70 0.30 0.50 -- 1.00 0.05 MAX * Controlling Parameter Significant Characteristic Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Exposed pad varies according to die attach paddle size. 3. Package may have one or more exposed tie bars at ends. BSC: Basic Dimension. Theoretically exact value shown without tolerances. See ASME Y14.5M REF: Reference Dimension, usually without tolerance, for information purposes only. See ASME Y14.5M JEDEC equivalent: Not Registered Drawing No. C04-063 Revised 09-12-05 (c) 2006 Microchip Technology Inc. DS22005A-page 19 MCP73833/4 10-Lead Plastic Micro Small Outline Package (UN) (MSOP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p D 2 B n 1 c A A2 L (F) A1 Number of Pins Pitch Overall Height Units Dimension Limits n p A A2 A1 E E1 D L F c B MIN INCHES NOM 10 .020 BSC MAX MIN MILLIMETERS* NOM 10 0.50 BSC MAX .043 .030 .000 .033 .193 BSC .118 BSC .118 BSC .016 0 .003 .006 5 5 .024 .037 REF - - .009 - - .031 8 .009 .012 15 15 .037 .006 - 0.75 0.00 - 0.85 4.90 BSC 3.00 BSC 3.00 BSC 1.10 0.95 0.15 Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Footprint Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bott om 0.40 0 0.08 0.15 5 5 0.60 0.95 REF - - 0.23 - - 0.80 8 0.23 0.30 15 15 * Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254 mm) per side. BSC: Basic Dimension. Theoretically exact value shown without tolerances. See ASME Y14.5M REF: Reference Dimesion, usually witho ut tolerance, for information purposes only. n See ASME Y14.5M JEDEC Equivalent: MO-187 BA Revised 09-16-05 Drawing No. C04-021 DS22005A-page 20 (c) 2006 Microchip Technology Inc. MCP73833/4 APPENDIX A: REVISION HISTORY Revision A (September 2006) * Original Release of this Document. (c) 2006 Microchip Technology Inc. DS22005A-page 23 MCP73833/4 NOTES: DS22005A-page 24 (c) 2006 Microchip Technology Inc. MCP73833/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device XX X/ XX Examples: * * a) b) c) d) e) f) a) b) c) d) MCP73833-AMI/UN: MCP73833-BZI/UN: MCP73833-CNI/MF: MCP73833-FCI/UN: MCP73833-GPI/UN: MCP73833-NVI/MF: MCP73834-CNI/MF: MCP73834-FCI/UN: MCP73834-GPI/UN: MCP73834-NVI/MF: 10-lead MSOP pkg. 10-lead MSOP pkg. 10-lead DFN pkg. 10-lead MSOP pkg. 10-lead MSOP pkg. 10-lead DFN pkg. 10-lead DFN pkg. 10-lead MSOP pkg. 10-lead MSOP pkg. 10-lead DFN pkg. Output Temp. Package Options* Device: MCP73833: 1A Fully Integrated Charger, PG function on pin 7 MCP73833T: 1A Fully Integrated Charger, PG function on pin 7 (Tape and Reel) MCP73834: 1A Fully Integrated Charger, TE function on pin 7 MCP73834T: 1A Fully Integrated Charger, TE function on pin 7 (Tape and Reel) * Refer to table below for different operational options. * * Consult Factory for Alternative Device Options. * * Consult Factory for Alternative Device Options Output Options * * Temperature: Package Type: I = -40C to +85C MF = Plastic Dual Flat No Lead (DFN) (3x3x0.9 mm Body), 10-lead UN = Plastic Micro Small Outline Package (MSOP), 10-lead Part Number MCP73833-AMI/MF MCP73833-BZI/MF MCP73833-CNI/MF MCP73833-FCI/MF MCP73833-GPI/MF MCP73833-NVI/MF MCP73833-AMI/UN MCP73833-FCI/UN MCP73834-BZI/MF MCP73834-CNI/MF MCP73834-FCI/MF MCP73834-NVI/MF MCP73834-FCI/UN VREG 4.20V 4.20V 4.20V 4.20V 4.20V 4.35V 4.20V 4.20V 4.20V 4.20V 4.20V 4.35V 4.20V IPREG/IREG 10% 100% 10% 10% 100% 10% 10% 10% 100% 10% 10% 10% 10% VPTH/VREG 71.5% N/A 71.5% 71.5% N/A 71.5% 71.5% 71.5% N/A 71.5% 71.5% 71.5% 71.5% ITERM/IREG 7.5% 7.5% 20% 7.5% 7.5% 7.5% 7.5% 7.5% 7.5% 20% 7.5% 7.5% 7.5% VRTH/VREG 96.5% 96.5% 94% 96.5% 96.5% 96.5% 96.5% 96.5% 96.5% 94% 96.5% 96.5% 96.5% Timer Period 0 hours 0 hours 4 hours 6 hours 6 hours 6 hours 0 hours 6 hours 0 hours 4 hours 6 hours 6 hours 6 hours (c) 2006 Microchip Technology Inc. DS22005A-page 25 MCP73833/4 NOTES: DS22005A-page 26 (c) 2006 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, Mindi, MiWi, MPASM, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2006, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona, Gresham, Oregon and Mountain View, California. The Company's quality system processes and procedures are for its PICmicro(R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2006 Microchip Technology Inc. DS22005A-page 27 WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Alpharetta, GA Tel: 770-640-0034 Fax: 770-640-0307 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 ASIA/PACIFIC Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Habour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Fuzhou Tel: 86-591-8750-3506 Fax: 86-591-8750-3521 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Shunde Tel: 86-757-2839-5507 Fax: 86-757-2839-5571 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xian Tel: 86-29-8833-7250 Fax: 86-29-8833-7256 ASIA/PACIFIC India - Bangalore Tel: 91-80-4182-8400 Fax: 91-80-4182-8422 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Gumi Tel: 82-54-473-4301 Fax: 82-54-473-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Penang Tel: 60-4-646-8870 Fax: 60-4-646-5086 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-572-9526 Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 EUROPE Austria - Wels Tel: 43-7242-2244-3910 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 08/29/06 DS22005A-page 28 (c) 2006 Microchip Technology Inc. |
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